Velocity overshoot is a physical effect resulting in transit times for charge carriers between terminals that are smaller than the time required for emission of an optical phonon.[1][2] The velocity therefore exceeds the saturation velocity up to three times, which leads to faster field-effect transistor or bipolar transistor switching. The effect is noticeable in the ordinary field-effect transistor for the gates shorter than 100 nm.[3]

Ballistic collection transistor

The device intentionally designed to benefit from the velocity overshoot is called ballistic collection transistor[4] (not to be mistaken with the ballistic deflection transistor).

See also

References

  1. ↑ Jyegal, Jang (June 2015). "Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length". AIP Advances. 5 (6): 067118. Bibcode:2015AIPA....5f7118J. doi:10.1063/1.4922332.
  2. ↑ Tan, Michael Loong Peng; Arora, Vijay K.; Saad, Ismail; Ahmadi, Mohammad Taghi; Razali, Ismail (May 2009). "The drain velocity overshoot in an 80 nm metal–oxide–semiconductor field-effect transistor". Journal of Applied Physics. 105 (7): 074503–074503–7. Bibcode:2009JAP...105g4503T. doi:10.1063/1.3091278. Retrieved 9 March 2018.
  3. ↑ SINITSKY, D.; ASSADERAGHI, F.; ORSHANSKY, M.; BOKOR, J.; HU, C. (1997). "VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS". Solid-State Electronics. 41 (8): 1119–1125. Bibcode:1997SSEle..41.1119S. CiteSeerX 10.1.1.133.2927. doi:10.1016/S0038-1101(97)00031-2.
  4. ↑ Chang, M F; Ishibashi, T (1996). Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte. pp. 126–129. ISBN 978-981-02-2097-6.


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